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| BD234/236/238 BD234/236/238 Medium Power Linear and Switching Applications * Complement to BD 233/235/237 respectively 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD234 : BD236 : BD238 VCEO Collector-Emitter Voltage : BD234 : BD236 : BD238 Collector-Emitter Voltage : BD234 : BD236 : BD238 Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature - 45 - 60 - 100 - 45 - 60 - 80 - 45 - 60 - 100 -5 -2 -6 25 150 - 65 ~ 150 V V V V V V V V V V A A W C C Value Units VCER VEBO IC ICP PC TJ TSTG Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) Parameter * Collector-Emitter Sustaining Voltage : BD234 : BD236 : BD238 Collector Cut-off Current : BD234 : BD236 : BD238 IEBO hFE VCE(sat) VBE(on) fT Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter ON Voltage Current Gain Bandwidth Product VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 100V, IE = 0 VEB = - 5V, IC = 0 VCE = - 2V, IC = - 150mA VCE = - 2V, IC = - 1A IC = - 1A , IB = - 0.1A VCE = - 2V, IC = - 1A VCE = - 10V, IC = -250mA 3 40 25 - 0.6 - 1.3 V V MHz - 100 - 100 - 100 -1 A A A mA Test Condition IC = - 100mA, IB = 0 Min. - 45 - 60 - 80 Typ. Max. Units V V V ICBO * Pulse Test: PW=300s, duty Cycle=1.5% Pulsed (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BD234/236/238 Typical Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -1000 -10 VCE = -2V IC = 10 IB hFE, DC CURRENT GAIN -100 -1 V BE(sat) V CE(sat) -0.1 -10 -1 -0.01 -0.01 -0.1 -1 -10 -0.1 -1 -10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -10 40 IC MAX. (Pulsed) 10s 35 0 10 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION -100 s 30 1m IC MAX. (Continuous) DC -1 BD234 BD236 BD238 s 25 20 15 10 5 -0.1 -1 -10 0 0 25 50 o 75 100 125 150 175 VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 3. Safe Operating Area Figure 4. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 BD234/236/238 Package Demensions TO-126 0.10 3.90 8.00 0.30 3.25 0.20 14.20MAX o3.20 0.10 11.00 0.20 (1.00) 0.75 0.10 1.60 0.10 0.75 0.10 0.30 (0.50) 1.75 0.20 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 13.06 16.10 0.20 0.50 -0.05 +0.10 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
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